Composition analysis of semiconductor quantum wells by energy filtered convergent-beam electron diffraction.
Identifieur interne : 002421 ( Main/Exploration ); précédent : 002420; suivant : 002422Composition analysis of semiconductor quantum wells by energy filtered convergent-beam electron diffraction.
Auteurs : RBID : pubmed:17630214Abstract
We show how energy-filtered convergent-beam electron diffraction (EFCBED) patterns can be used to determine the chemical composition of buried semiconductor strained quantum wells. Our method is based on a quantitative analysis of the intensities of high-order Bragg lines in the transmitted disc of EFCBED patterns taken from plan-view samples. This analysis makes it possible to determine the displacement vector R introduced between the top and bottom parts of the matrix by the deformation of the quantum well and consequently to determine its composition. This is illustrated in the case of an In(x)Ga(1-)(x)As quantum well buried in a GaAs matrix. A detailed analysis of the effect of experimental parameters on Bragg lines intensity is performed. In particular, the importance of the choice of the diffraction vector is pointed out. The relative uncertainty on the measurement of the indium content x is found to be lower than 5% and a possible occurrence of slight compositional fluctuations in the (001) growth plane is pointed out.
DOI: 10.1016/j.ultramic.2007.06.001
PubMed: 17630214
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Composition analysis of semiconductor quantum wells by energy filtered convergent-beam electron diffraction.</title><author><name sortKey="Jacob, D" uniqKey="Jacob D">D Jacob</name><affiliation wicri:level="3"><nlm:affiliation>Université des Sciences et Technologies de Lille, Bâtiment C6, 59655 Villeneuve d'Ascq cedex, France. damien.jacob@univ-lille1.fr</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Université des Sciences et Technologies de Lille, Bâtiment C6, 59655 Villeneuve d'Ascq cedex</wicri:regionArea><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Ascq</settlement></placeName></affiliation></author><author><name sortKey="Zuo, J M" uniqKey="Zuo J">J M Zuo</name></author><author><name sortKey="Lefebvre, A" uniqKey="Lefebvre A">A Lefebvre</name></author><author><name sortKey="Cordier, Y" uniqKey="Cordier Y">Y Cordier</name></author></titleStmt><publicationStmt><date when="2008">2008</date><idno type="doi">10.1016/j.ultramic.2007.06.001</idno><idno type="RBID">pubmed:17630214</idno><idno type="pmid">17630214</idno><idno type="wicri:Area/Main/Corpus">002738</idno><idno type="wicri:Area/Main/Curation">002738</idno><idno type="wicri:Area/Main/Exploration">002421</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We show how energy-filtered convergent-beam electron diffraction (EFCBED) patterns can be used to determine the chemical composition of buried semiconductor strained quantum wells. Our method is based on a quantitative analysis of the intensities of high-order Bragg lines in the transmitted disc of EFCBED patterns taken from plan-view samples. This analysis makes it possible to determine the displacement vector R introduced between the top and bottom parts of the matrix by the deformation of the quantum well and consequently to determine its composition. This is illustrated in the case of an In(x)Ga(1-)(x)As quantum well buried in a GaAs matrix. A detailed analysis of the effect of experimental parameters on Bragg lines intensity is performed. In particular, the importance of the choice of the diffraction vector is pointed out. The relative uncertainty on the measurement of the indium content x is found to be lower than 5% and a possible occurrence of slight compositional fluctuations in the (001) growth plane is pointed out.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">17630214</PMID><DateCreated><Year>2008</Year><Month>02</Month><Day>18</Day></DateCreated><DateCompleted><Year>2008</Year><Month>04</Month><Day>17</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Print">0304-3991</ISSN><JournalIssue CitedMedium="Print"><Volume>108</Volume><Issue>4</Issue><PubDate><Year>2008</Year><Month>Mar</Month></PubDate></JournalIssue><Title>Ultramicroscopy</Title><ISOAbbreviation>Ultramicroscopy</ISOAbbreviation></Journal><ArticleTitle>Composition analysis of semiconductor quantum wells by energy filtered convergent-beam electron diffraction.</ArticleTitle><Pagination><MedlinePgn>358-66</MedlinePgn></Pagination><Abstract><AbstractText>We show how energy-filtered convergent-beam electron diffraction (EFCBED) patterns can be used to determine the chemical composition of buried semiconductor strained quantum wells. Our method is based on a quantitative analysis of the intensities of high-order Bragg lines in the transmitted disc of EFCBED patterns taken from plan-view samples. This analysis makes it possible to determine the displacement vector R introduced between the top and bottom parts of the matrix by the deformation of the quantum well and consequently to determine its composition. This is illustrated in the case of an In(x)Ga(1-)(x)As quantum well buried in a GaAs matrix. A detailed analysis of the effect of experimental parameters on Bragg lines intensity is performed. In particular, the importance of the choice of the diffraction vector is pointed out. The relative uncertainty on the measurement of the indium content x is found to be lower than 5% and a possible occurrence of slight compositional fluctuations in the (001) growth plane is pointed out.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Jacob</LastName><ForeName>D</ForeName><Initials>D</Initials><Affiliation>Université des Sciences et Technologies de Lille, Bâtiment C6, 59655 Villeneuve d'Ascq cedex, France. damien.jacob@univ-lille1.fr</Affiliation></Author><Author ValidYN="Y"><LastName>Zuo</LastName><ForeName>J M</ForeName><Initials>JM</Initials></Author><Author ValidYN="Y"><LastName>Lefebvre</LastName><ForeName>A</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Cordier</LastName><ForeName>Y</ForeName><Initials>Y</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2007</Year><Month>06</Month><Day>13</Day></ArticleDate></Article><MedlineJournalInfo><Country>Netherlands</Country><MedlineTA>Ultramicroscopy</MedlineTA><NlmUniqueID>7513702</NlmUniqueID><ISSNLinking>0304-3991</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2006</Year><Month>11</Month><Day>17</Day></PubMedPubDate><PubMedPubDate PubStatus="revised"><Year>2007</Year><Month>5</Month><Day>28</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2007</Year><Month>6</Month><Day>5</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2007</Year><Month>6</Month><Day>13</Day></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2007</Year><Month>7</Month><Day>17</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2007</Year><Month>7</Month><Day>17</Day><Hour>9</Hour><Minute>1</Minute></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2007</Year><Month>7</Month><Day>17</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S0304-3991(07)00170-2</ArticleId><ArticleId IdType="doi">10.1016/j.ultramic.2007.06.001</ArticleId><ArticleId IdType="pubmed">17630214</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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